Diamita na silicon carbide nanowires gabaɗaya bai wuce 500nm ba, kuma tsayin zai iya kaiwa ɗaruruwan μm, wanda ke da babban al'amari fiye da siliki carbide wiskers.

Silicon carbide nanowires sun gaji kaddarorin injina daban-daban na kayan siliki carbide mai girma kuma suna da kaddarorin da yawa na musamman ga ƙananan kayan ƙasa. A ka'ida, ma'auni na Matasa na SiCNWs guda ɗaya yana kusan 610 ~ 660GPa; Ƙarfin lanƙwasawa zai iya kaiwa 53.4GPa, wanda shine kusan sau biyu na whiskers SiC; Ƙarfin ƙarfi ya wuce 14GPa.

Bugu da kari, tun da SiC kanta kayan aikin bandgap ne kai tsaye, motsin lantarki yana da girma. Bugu da ƙari, saboda girman girman nano nano, SiC nanowires yana da ƙananan tasiri kuma ana iya amfani dashi azaman kayan haske; a lokaci guda, SiC-NWs kuma suna nuna tasirin ƙididdiga kuma ana iya amfani da su azaman abu mai haɓakawa na semiconductor. Nano silicon carbide wayoyi suna da yuwuwar aikace-aikace a cikin fagagen fitar da fili, ƙarfafawa da kayan ƙarfafawa, supercapacitors, da na'urorin ɗaukar igiyoyin lantarki.

A fagen fitar da fili, saboda nano SiC wayoyi suna da kyakkyawan yanayin zafin zafi, nisa rata fiye da 2.3 eV, da kyakkyawan aikin fitar da filin, ana iya amfani da su a cikin kwakwalwan kwamfuta da aka haɗa, injin microelectronic na'urorin, da sauransu.
An yi amfani da silicon carbide nanowires azaman kayan haɓakawa. Tare da zurfafa bincike, ana amfani da su a hankali a cikin catalysis na photochemical. Akwai gwaje-gwajen da aka yi amfani da silicon carbide nanowires don gudanar da gwaje-gwajen ƙima akan acetaldehyde, da kwatanta lokacin bazuwar acetaldehyde ta amfani da hasken ultraviolet. Ya tabbatar da cewa silicon carbide nanowires suna da kyawawan kaddarorin photocatalytic.

Tun da saman SiC nanowires na iya samar da babban yanki na tsarin Layer-Layer, yana da kyakkyawan aikin ajiyar makamashi na lantarki kuma an yi amfani dashi a cikin manyan capacitors.