Dayameta nke silicon carbide nanowires bụ n'ozuzu ihe na-erughị 500nm, na ogologo nwere ike iru ọtụtụ narị μm, nke nwere akụkụ dị elu karịa silicon carbide whiskers.

Silicon carbide nanowires ketara akụrụngwa dị iche iche nke silicon carbide nnukwu ihe yana nwekwara ọtụtụ ihe pụrụ iche na ihe ndị dị ala. N'ụzọ doro anya, modul nke Young nke otu SiCNW bụ ihe dịka 610 ~ 660GPa; ike na-ehulata nwere ike iru 53.4GPa, nke bụ ihe dị ka okpukpu abụọ nke mmanya SiC; ike tensile karịrị 14GPa.

Na mgbakwunye, ebe SiC n'onwe ya bụ ihe na-apụtaghị ìhè bandgap semiconductor ihe, ngagharị elektrọn dị elu. Ọzọkwa, n'ihi nha nha nano ya, SiC nanowires nwere mmetụta dị ntakịrị ma nwee ike iji ya dị ka ihe na-egbuke egbuke; N'otu oge ahụ, SiC-NW na-egosipụtakwa mmetụta quantum ma nwee ike iji ya dị ka ihe na-emepụta ihe na-emepụta ihe na-emepụta ihe. Nano silicon carbide wires nwere ike ngwa n'ọhịa nke ikuku ikuku, ihe nkwado na ihe na-eme ka ike sie ike, ndị nwere ikike, na ngwaọrụ nnabata electromagnetic.

N'ọhịa nke ikuku ikuku, n'ihi na nano SiC wires nwere ọmarịcha thermal conductivity, a band obosara obosara karịa 2.3 eV, na ọmarịcha ubi emission arụmọrụ, ha nwere ike iji na integrated circuit ibe, agụụ microelectronic ngwaọrụ, wdg.
A na-eji silicon carbide nanowires mee ihe dị ka ihe na-akpali akpali. Site na mmụba nke nyocha, a na-eji nwayọọ nwayọọ na-eji ha eme ihe na fotochemical catalysis. Enwere nnwale na-eji silicon carbide nanowires na-eduzi nyocha ọnụego catalytic na acetaldehyde, ma tụnyere oge ire ere acetaldehyde site na iji ụzarị ultraviolet. Ọ na-egosi na silicon carbide nanowires nwere ezigbo fotocatalytic Njirimara.

Ebe ọ bụ na elu nke SiC nanowires nwere ike ịmepụta mpaghara buru ibu nke ihe owuwu okpukpu abụọ, ọ nwere arụmọrụ nchekwa ike eletrik dị mma ma jiri ya mee ihe na supercapacitors.