izina RY'IGICURUZWA | Ibisobanuro |
SiC nanowire | Diameter: 100-500nm Uburebure: 50-100um Isuku: 99% Kugaragara: ifu yicyatsi kibisi Ipaki: imifuka ibiri irwanya static |
Silicon karbide nanowires, diameter D 100-500nm, uburebure L 50-100um, ubuziranenge 99+, icyatsi-icyatsi.
Ibintu bifatika bya silicon karbide nanowires: ubwoko bwa cubic kristal, buba mubwoko bumwe bwa kirisiti nka diyama, ni ubwanwa bukomeye bwubwanwa bumeze nkuburinganire bumwe bwa kirisiti ifite imbaraga za mashini nkimbaraga nyinshi na modulus ndende.Nibimwe mubikoresho byiza byo gushimangira no gukomera.
Imiterere yimiti ya silicon carbide nanowires: kwambara birwanya, kurwanya ubushyuhe bwinshi, kurwanya ubushyuhe budasanzwe bwumuriro, kurwanya ruswa, kurwanya imirasire.
Dufite kandi ibyuma bya SiC na SiC nanopowder, ifu ya SiC sub-micron, ifu ya micron ya SiC yatanzwe.
Niba ubishaka urakaza neza kubisobanuro birambuye, urakoze.
Serivisi zacu1. Ubwiza kandi buhamye2, Igiciro cyuruganda3. Hindura serivisi4. Gutanga vuba5. Abatekinisiye hamwe nitsinda ryitsinda R&D6. Buri gihe usubize vuba kandi utange ibyifuzo byabakiriya.Amakuru yisosiyete
Isosiyete yacu Guangzhou Honwwu Material Techonology nimwe mubushinwa bukomeye kandi butanga nanomaterial.Twinjiye mu nganda za nano kuva mu 2002, uburambe bwimyaka irenga 16, twateje imbere ikoranabuhanga n’ibikoresho bigezweho, sisitemu yo kugenzura ubuziranenge, ibicuruzwa byuzuye, kandi dukusanya izina rya HongWu Brand ku isoko ry’imbere mu gihugu ndetse n’amahanga.
Ubufatanye burambye bwa win-win nuburyo dufatanya nabafatanyabikorwa bacu.
Turi aomng abambere bambere murugo nabatanga isoko ya Beta SiC whisker powder / Beta silicon karbide whisker, Β-Ubwokosilicon karbide whiskers twabyaye ni imbaraga-nyinshi zogosha ubwanwa busa (bumwe-bumwe) kristu imwe.Nka an atomike ya kirimbuzi, ifite ubucucike buke, gushonga cyane, imbaraga nyinshi, modulus ndende quantity, kwaguka kwinshi kwubushyuhe, no kwambara, kurwanya ruswa, ubushyuhe bwinshi, kurwanya okiside and nibindi bintu byiza biranga.
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