Diameter Carbide ya Silicon Nanonires iri munsi ya 500Nm, kandi uburebure burashobora kugera kumajana ya μm, bifite ibipimo bigezweho ugereranije no muri Silicon Carbide.

Silicon Carbide Nanowires yazungura ibintu bitandukanye bya mashini ya silicon carbide ibikoresho byinshi kandi bifite imitungo myinshi yihariye ibikoresho bike. Mubyukuri, modulus yumusore ya sicnws imwe igera kuri 610 ~ 660GPA; Imbaraga zo kunama zishobora kugera kuri 53.4GPA, zijyanye no kwinuba kabiri; Imbaraga za Tensile zirenga 14GPA.

Byongeye kandi, kubera ko sic ubwayo ari ibikoresho bitaziguye bya bandgap, gukomera kwa elect ni byinshi. Byongeye kandi, kubera ubunini bwa nano, nanowires ifite ingaruka nto kandi irashobora gukoreshwa nkibikoresho bya milines; Muri icyo gihe, Sic-NWS yerekana kandi ingaruka za quanim kandi zirashobora gukoreshwa nka gatalytic ya semiconductor. Nano Silicon Carbide Insinga zifite ubushobozi bwo gusaba mumirima yumurima wo mu murima, gukomeretsa no guhuza ibikoresho, supercaciters, hamwe nibikoresho bikurura amashanyarazi.

Mu murima w'abahunzi bo mu murima, kuko Insinga za Sic zifite ubushyuhe buhebuje, ubugari bwa gatsiko burenze 2.3 EV, kandi ibikoresho byiza byo guhinduranya imirimo, ibicurane bya microeletronic, nibindi.
Silicon Carbide Nanonires yakoreshejwe nkibikoresho bya catalyst. Hamwe no kwimbitse ubushakashatsi, buhoro buhoro bikoreshwa muri katalisi ya Photochemical. Hariho ubushakashatsi bukoreshwa na silicon carbide nanowires gukora ibipimo bya kataleti kuri acetaldehyde, kandi gereranya nigihe cya Acetaldehyde dephispolet ikoreshwa imirasire ya ultraviolet. Irerekana ko Silicon Carbide Nanonires ifite ibintu byiza byamafototique.

Kubera ko ubuso bwa Sic Nanonires bushobora gukora ahantu hanini murwego rwibintu bibiri, bifite imikorere yububiko bwiza bwa electrochemical kandi bwakoreshejwe muri supercacitors.