Antimony Deping Tin Dioxide Nano PoWDER (ATO)Icho chinhu chine Semiconductor Properties. Sechinyorwa chemamiconductor chezvinyorwa, ine zvimwe zvezvinyorwa zvinotevera zveMicononductor Properties:

1. Band Gap: ATO ine mwero band gap, kazhinji inenge 2 EV. Saizi yeiyi gap inoitendera kuti iite mushe se semiconductor pamhepo tembiricha.

2.. Kana Antimony anoitwa, ATo anoratidza n-type convery, ayo ari kuyerera kwemagetsi anokonzerwa nekufambisa kwealekirini muiri bhendi. Yakakwira yekuisa pfungwa yekuisa, iyo yakasimba iyo yekuita. Mukupesana, kana tini oxide ichisanganiswa nezvimwe zvinhu, senge aluminium, zinc kana gallium, p-mhando doping inogona kuumbwa. Ndiko kuti, kuyerera kwazvino kunokonzerwa nekutama kwemakomba akanaka muValence Band.

3. Optical Properties: ATO yechiedza chechiedza uye chiri pedyo-infrared mwenje une imwe transpency. Izvi zvinopa zvinogona kuitika mune Optical application, senge mapikicha, mwenje sensors, nezvimwe.

4

Naizvozvo, nino ato inowanzoshandiswa muzviitiko zvekufambisa uye mafirimu akajeka ekugadzirisa mumidziyo yemagetsi, uye inoshandiswa zvakanyanya mumidziyo yakasiyana-siyana yemagetsi. Yemifananidzo Semiconductor kutapurirana, mafambiro makuru uye kujeka kweAto vane hunhu hwakakosha hunhu. Inogona kushandiswa seyakajeka electrode zvinyorwa muTheyelectric zvishandiso, zvakadai solar cry

Mukuwedzera, ato inogona zvakare kuiswa kuti ifambe nano inki, kuitisa kuitisa, kugadzirisa zvipenyu zveupfu uye mamwe minda. Mune izvi zvekushandisa, iyo Semiconductor zvinhu zvinogona kuzadzisa kutapurirana kweazvino kuburikidza neyekuita dura kana iyo firimu rinoita. Uye zvakare, kutapurirana kunooneka kwechiedza chechinyorwa chechinyorwa chinogona kuchengetwa nekuda kwekujeka kwayo.

Hongwu nano inopa Antimony Diding Tin Dioxide poda mune akasiyana ezasi saizi. Tikugashirei kuti ubate isu kana iwe uchifarira Antimony Deping Tin dioxide nano poda (ATO).