Iyo dhayamita yesilicon carbide nanowires kazhinji isingasviki 500nm, uye kureba kunogona kusvika mazana ema μm, iyo ine hupamhi hwepamusoro kupfuura silicon carbide ndebvu.

Silicon carbide nanowires inogara nhaka dzakasiyana-siyana dzemuchina zvesilicon carbide zvinhu zvakawanda uye zvakare ine zvakawanda zvivakwa zvakasarudzika kune yakaderera-dimensional zvinhu. Tichifunga, iyo Young's modulus yeSiCNWs imwechete inenge 610 ~ 660GPa; simba rekukotama rinogona kusvika pa53.4GPa, inova kaviri yendebvu dzeSiC; simba rekusimba rinopfuura 14GPa.

Mukuwedzera, sezvo SiC pachayo iri isina kunanga bandgap semiconductor zvinhu, erekitironi kufamba kwakakwira. Uyezve, nekuda kwehukuru hwayo nano, SiC nanowires ine diki saizi maitiro uye inogona kushandiswa sechinhu chinopenya; panguva imwecheteyo, SiC-NWs inoratidzawo quantum mhedzisiro uye inogona kushandiswa semiconductor catalytic zvinhu. Nano silicon carbide waya dzine mukana wekushandisa muminda yekubuda kwemunda, yekusimbisa uye inoomesa zvinhu, supercapacitors, uye electromagnetic wave absorption zvishandiso.

Mumunda wekubuda kwemunda, nekuti nano SiC waya dzine yakanakisa yekupisa yekupisa, bhendi gap rakakura kupfuura 2.3 eV, uye yakanakisa dhizaini emission performance, inogona kushandiswa mune akabatanidzwa edunhu machipisi, vacuum microelectronic zvishandiso, nezvimwe.
Silicon carbide nanowires yakashandiswa sezvinhu zvinokonzeresa. Nekudzika kwekutsvaga, ivo vari kushandiswa zvishoma nezvishoma mu photochemical catalysis. Pane zviedzo zvinoshandisa silicon carbide nanowires kuita catalytic rate kuyedza paacetaldehyde, uye enzanisa nguva yekuora kweacetaldehyde uchishandisa ultraviolet mwaranzi. Zvinoratidza kuti silicon carbide nanowires vane yakanaka photocatalytic zvivakwa.

Sezvo pamusoro peSiC nanowires inogona kuumba nzvimbo yakakura ye-double-layer chimiro, ine yakanakisa electrochemical simba rekuchengetedza kuita uye yakashandiswa mune supercapacitors.