Inkcazo:
Ikhowudi | D500 |
Igama | I-Silicon Carbide Whisker |
Ifomula | β-SiC-w |
Inombolo yeCAS. | 409-21-2 |
Ubungakanani | 0.1-2.5um ububanzi, 10-50um ubude |
Ubunyulu | 99% |
Uhlobo lweCrystal | Beta |
Imbonakalo | Luhlaza |
Iphakheji | 100g, 500g, 1kg okanye njengoko kufuneka |
Usetyenziso olunokwenzeka | Njengeyona arhente igqwesileyo yokuqinisa kunye neyokuqina, i-SiC whisker eqinile esekwe kwintsimbi, esekwe kwi-ceramic kunye ne-polymer-based composite materials isetyenziswe ngokubanzi koomatshini, iikhemikhali, ukukhusela, amandla, ukhuseleko lokusingqongileyo kunye nezinye iinkalo. |
Inkcazo:
Iwhisker ye-SiC yifiber enye yekristale eqhelaniswe kakhulu enobubanzi obusuka kwi-nanometer ukuya kwi-micrometer.
Ubume bayo bekristale bufana nedayimane.Kukho ukungcola kweekhemikhali ezimbalwa kwi-crystal, akukho mida yengqolowa, kunye neziphene ezimbalwa ze-crystal structure.Ukuqulunqwa kwesigaba kufana.
Iwhisker ye-SiC inendawo ephezulu yokunyibilika, ingxinano ephantsi, amandla aphezulu, imodyuli ephezulu yokunwebeka, isantya esisezantsi sokwandiswa kwe-thermal, kunye nokunganyangeki kakuhle kokunxiba, ukumelana nokugqwala, kunye nokumelana nobushushu obuphezulu be-oxidation.
I-whisker ye-SiC isetyenziswa ikakhulu kwizicelo eziqinisayo apho ubushushu obuphezulu kunye nezicelo zamandla aphezulu ziyafuneka.
Imeko yoGcino:
I-Silicon Carbide Whisker (β-SiC-w) kufuneka igcinwe ivaliwe, igweme ukukhanya, indawo eyomileyo.Ukugcinwa kobushushu begumbi kulungile.
I-SEM :