Ububanzi be-selicon ye-calbide ye-carbide bungaphantsi kwe-500NM, kwaye ubude bungafikelela kumakhulu e-μm, enomlinganiso omkhulu kunoko.

I-Silicon ye-Silicon Carbide iFAIRSTERE Ithiyori, imodyuli yomncinci ye-snv enye imalunga ne-610 ~ 6660gpa; Amandla e-Bego anokufikelela kwi-53.4GPA, enokuba iphantse kabini ye-SIC Shiskers; Amandla amanxuwa angaphezulu kwe-14gpa.

Ukongeza, kuba i-sic ngokwayo iyintonganga ngqo ye-bandgap semiconductor, i-elektroning iphezulu. Ngaphezu koko, ngenxa yobukhulu be-Nano ye-Nano, i-SANANANANAIS ZESIQINISEKILEYO YABASEBENZISI kwaye zinokusetyenziswa njengezixhobo ze-luminescent; Kwangelo xesha, i-SIC-NWS ikwabonisa iziphumo zenani kwaye zinokusetyenziswa njengezixhobo ze-semicondcucy. I-Nano Silicon Carbide i-carbide inawo amathuba okusebenza kumacandelo okuphuma komhlaba, ukuqiniswa nokuthambisa, kunye nezixhobo zokucheba, kunye nezixhobo ze-elektromagnetic zangenisa izixhobo.

Kwicandelo lokukhutshwa komhlaba, kuba iingcingo ze-nano ze-Nano zinengxaki yokuqhubela phambili, ububanzi bebhendi enkulu kune-2.3 e-EV, banokusetyenziswa kwii-chip ezihlanganisiweyo zesekethe, zinokusetyenziswa kwii-vacum zesekethe, njl.
I-Silicon Carbide Nanonikezi isetyenzisiwe njengezixhobo ezikhuthazayo. Ngokwanzulu kophando, ngokuthe ngcembe basetyenziswa kwi-fotofollical catalysis. Kukho iimvavanyo ezisebenzisa i-selicon phalfide daluents zovavanyo kwi-acetaldehydehyde, kwaye uthelekisa ixesha le-acetaldehydehyde ende. Ingqina ukuba i-lelicon milicon daide ineempawu ezintle zeefoto.

Kuba umphezulu wee-dano ezine zinokwenza indawo enkulu yesakhiwo esiphindwe kabini, inemisebenzi yokugcina amandla e-elektroniki ye-elektroniki kwaye isetyenzisiwe kwiziko le-Supercacitors.