Inkcazo:
Igama | Si Nanowires |
Ushunqulelo | IiSiNWs |
Inombolo yeCAS. | 7440-21-3 |
Ububanzi | 100-200nm |
Ubude | > 10um |
Ubunyulu | 99% |
Imbonakalo | Umgubo |
Iphakheji | 1g, 5g okanye njengoko kufuneka |
Usetyenziso oluphambili | Iinzwa, ii-detectors, i-transistor, izinto ze-anode kwiibhetri ze-Li-ion. |
Inkcazo:
I-silicon nanowires inezi mpawu zilandelayo:
I-Si nanowires ineempawu ezikhethekileyo ze-optical ezifana ne-fluorescence kunye ne-ultraviolet;iipropati zombane ezifana nokukhutshwa kwentsimi kunye nokuthutha i-electron;I-thermal conductivity, umsebenzi ophezulu ophezulu, kunye nemiphumo yokuvalelwa kwe-quantum.
1. Ukusetyenziswa kwe-nano silicon wire sensors
Ukuzoba kwisiseko sophando lwangoku lwezinto ezisekelwe kwi-silicon kunye neziphumo zophando ezikhoyo zokulungiswa kwe-nano-sensor, iintambo ze-silicon nano zisetyenziselwa ukudibanisa i-nano-sensor kunye novakalelo oluphezulu, ukujonga ixesha langempela kunye nokukwazi ukuziphilisa.
2. I-Silicon Nanowire Transistors
Ukusebenzisa iingcingo ze-nano Si njengeyona yunithi yolwakhiwo oluphambili, iintlobo ngeentlobo zeetransistors ezifana nee-silicon nanowire FETs, ii-transistors ze-electron enye (ii-SET) kunye nee-phototransistors ze-field-effect ziye zenziwa.
3. Isihloli sefoto
Uphononongo lubonise ukuba i-silicon nanowires ineempawu zobuntununtunu obuthe ngqo bepolarization, isisombululo esiphezulu sendawo, kunye nokuhambelana lula kunye nezinye izinto ze-optoelectronic ezenziwe ngeendlela "ezisezantsi-phezulu", ukuze zisetyenziswe kwiinkqubo ezidibeneyo ze-nano optoelectronic ezizayo.
4. Si nano ucingo lithium-ion anode izinto ibhetri
I-silicon yimathiriyeli ye-anode enelona xabiso liphezulu le-lithium yokugcina ithiyori efunyenwe ukuza kuthi ga ngoku, kwaye umthamo wayo othile uphezulu kakhulu kunemathiriyeli yegraphite, kodwa i-lithium yayo yokudibanisa ihambelana ngokusondeleyo nobukhulu besilicon kwi-electrode, ukwakhiwa kwe-electrode. , kunye nexabiso lokukhupha intlawulo.Ibhetri entsha ye-lithium-ion eyenziwe kwi-SiNWs inokugcina amandla angaphezulu kwamaxesha e-10 kuneebhetri eziqhelekileyo ezinokutshajwa.Isitshixo kwitekhnoloji yayo kukuphucula amandla okugcina i-anode yebhetri.
Imeko yoGcino:
I-Silicon nanowires (SiNWs) kufuneka ivalwe kakuhle, igcinwe kwindawo epholileyo, eyomileyo, igweme ukukhanya okuthe ngqo.Ukugcinwa kobushushu begumbi kulungile.