Ifekthri inikezela nge-HW-D500C SiCNWs i-silicon carbide nanowires

Incazelo emfushane:

Ezinhlanganisela ze-ceramic matrix ezijwayelekile, i-HW-D500C SiCNWs i-silicon carbide nanowires engaphansi kuka-10wt% ngokuvamile iyengezwa.


Imininingwane Yomkhiqizo

Ifekthri inikezela nge-HW-D500C SiCNWs i-silicon carbide nanowires

Ukucaciswa:

Ikhodi D500C
Igama I-silicon carbide nanowires
Ifomula Ama-SICNWs
Inombolo ye-CAS. 409-21-2
Ububanzi&Ubude D <500nm L 50-100um
Ubumsulwa 99%
Uhlobo lweCrystal cubic
Ukubukeka grey green
Iphakheji 10g, 50g, 100g, 200g noma njengoba kudingeka
Izinhlelo zokusebenza ezingaba khona Izinto eziyinhlanganisela eziqinisiwe neziqinisiwe, izinhlanganisela ze-Metal matrix kanye ne-ceramic matrix eziqiniswe futhi zaqiniswa yi-silicon carbide nanowires zisetshenziswe kabanzi emishinini, embonini yamakhemikhali, ekuvikelweni kwezwe, amandla, ukuvikelwa kwemvelo nakweminye imikhakha.

Incazelo:

Izici ezibonakalayo ze-silicon carbide nanowire:

I-Cubic crystal, okuwuhlobo lwekristalu olufana nedayimane.Kuyikristalu enohlangothi olulodwa olunamandla aphezulu kanye nokuma kwentshebe.Inezici eziningi ezinhle kakhulu zemishini ezifana namandla aphezulu kanye ne-modulus ephezulu, okungenye yezinto ezinhle kakhulu eziqinisayo neziqinisayo.

Izakhiwo zamakhemikhali ze-silicon carbide nanowires:

Ukumelana nokugqoka, ukumelana nokushisa okuphezulu, ukumelana nokushaqeka okukhethekile, ukumelana nokugqwala, ukumelana nemisebe.

Izikhombisi-ndlela eziyinhloko ze-silicon carbide nanowires:

1.Izinhlanganisela ze-SIC nanowires/ceramic matrix:SIC/TIC/WC/ALN/SI3N4/TIN/AL2O3/ZRO2/ZRB2 njll

2.SIC izinhlanganisela ze-nanowires/metal matrix:AL/TI/NI njll

3.Izinhlanganisela ze-SIC nanowires/polymer: Inayiloni/inhlaka/irabha/ipulasitiki njll.

Ukuhlakazeka kanye nenani elingeziwe le-SiC Nanowires:

Ukuhlakazeka kanye nenani elingeziwe le-SiC Nanowires (ngokwereferensi kuphela)
Imithombo yezindaba enconyiwe yokuhlakazwa: amanzi akhishiwe, amanzi acwebile, i-anhydrous ethanol, i-ethylene glycol
I-dispersant enconyiwe:I-Polyethylene imine (PEI), i-nonionic polyacry lamide (PAM), i-sodium pyrophosphate (SPP), i-twain 80, i-silicon compound coupling agent, i-polyethylene glycol, i-sodium hexametaphosphate, i-sodium carboxymethyl cellulose (CMC), njll.
Ezingxenyeni ezijwayelekile ze-ceramic matrix, ama-silicon carbide nanowires angaphansi kuka-10wt% ngokuvamile ayengezwa.Ngokomkhuba wokuhlola, ukuphakama kwenani elengezayo akukona ukuthi kungcono kakhulu, kuhlobene nempahla eluhlaza, usayizi wezinto ezibonakalayo, izinga lokushisa le-sintering, inani elizwakalayo lokungeza lingathola umphumela omuhle kakhulu wokuqina.

Ngemuva kokuxuba i-SiC nanowire slurry ehlakaziwe kanye ne-ceramic powder, qhubeka uhlakaza amahora angu-1-12.Kunconywa ukuhlakazeka kogayo lobuhlalu noma indlela yokunyakazisa ngomshini.Indlela yokugaya ibhola kulula ukubangela ukuthi ama-nanowires aphule.

Uma ukuxutshwa kwe-SiC nanowires nezinto ze-matrix kungekuhle kangako, i-sodium hexametaphosphate ka-1% wesisindo se-SiCNW (noma inani elincane le-isopropanol/ethanol) ingngezwa njengesihlakazeka ukuze kuthuthukiswe ukufana kokuxuba.

Ngemuva kokuhlakazeka, ukoma kanye nokuphelelwa amandla kwamanzi kufanele kwenziwe ngokushesha.Thela i-slurry emkhunjini enendawo enkulu ukuze uyisakaze ibe mncane, futhi ukwandise indawo izokhuphuka futhi ikhiphe amanzi kalula.Kubaluleke kakhulu ukugwema ukuchithwa kwezinto eziluhlaza phakathi kwe-nanowires kanye ne-matrix.Izinga lokushisa elinconywayo lokumisa liyi-110-160 ℃.

I-SEM:

I-silicon carbide nanowires

 


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