I-Cubic Silicon Carbide Whiskersiyintshebe ephakeme kakhulu -emise (i-one-dimensional) i-monolithic, enezici eziningi ezinhle kakhulu zemishini ezifana nokuqina okuphezulu kanye namamodeli aphezulu.Isetshenziswa kabanzi ezintweni eziyinhlanganisela esekwe ngensimbi neze-ceramic.Isetshenziswa kakhulu ezingxenyeni zokushisa okuphezulu emkhakheni wamathuluzi e-ceramic, insimu yesikhala, ukuthwala, amaphampu amakhulu odaka, njll.

Izici zomzimba: Iwuhlobo lwe-cubic crystal, okuwuhlobo lwekristalu olufanayo nedayimane.

Izici zamakhemikhali: anti-wear, ukumelana nokushisa okuphezulu, ikakhulukazi ukumelana nokushaqeka kokushisa, ukumelana nokugqwala, ukumelana nemisebe.

Isicelo: i-ceramic bearing ephezulu, isikhunta, ukudubula kwe-high-voltage, ukumelana nokushisa okuphezulu, njll.

I-silicon carbide inesakhiwo sekristalu yedayimane.Lokhu kungenxa yezakhi ze-carbon ne-silicon ezakha ama-SiC.Ziyingxenye ye-SP ye-IVA kuthebula lomjikelezo wezinto.Lapho lezi zakhi zakha amakristalu Ukuqina okukhulu kwe-SP3 kuhlelwa, kukhona ukhiye oqinile we-covalent, izici zentengo ezivamile namandla aphezulu okhiye, okunquma ukuthi i-silicon carbide inamandla athile namandla omshini.Ukuqina kwe-SIC's MOBS kufinyelele ku-9.5, okwesibili ngemuva kwedayimane.Amadevu e-Cubic SiC anokuqina okuphezulu, i-modulus, amandla aqinile kanye nokumelana nokushisa okuphezulu kunezinye izinto zentshebe.

Amadevu e-SiC asatshalaliswa ngokulinganayo emzimbeni ominyene njengezinhlayiya zesigaba sesibili, ezingafanisa umzimba kahle.Ngemuva kokwakhiwa kokushisa okuphezulu, ngenxa yokuthi i-coefficient yokwandisa okushisayo ye-crystal kanye nempahla yomzimba ihlukile, i-crystal kanye ne-interface ye-interface yempahla yomzimba Ngemva kokukhiqizwa kwengcindezi eyengeziwe, ngemva kokuqhekeka okuncane kwezinto ezihlanganisiwe, ukucindezeleka kokuqhekeka. isiphetho sidlulela ku-crystal ne-matrix interface.Ukuthola ukucindezeleka kwangaphandle.Ngale ndlela, amadevu e-SiC angavimbela ukwanda okuqhubekayo kwama-micro-cracks ngokuthi "ibhuloho couplet", "crack deflection", "crystal pull out effects" kanye "broken crystal effects", ngaleyo ndlela kuthuthukise futhi kuqinise umzimba womzimba.Impahla ehlanganisiwe inokuqina okuphezulu kanye nezakhiwo zemishini.Ngenxa yokuthi amakristalu e-SIC kumele abe nokuzinza okuhle emazingeni okushisa aphezulu, izinto zayo eziyinhlanganisela ezithuthukisiwe neziqinile zisengakwazi ukulondoloza izakhiwo ezinhle zemishini lapho i-1000 ° C ingaphezulu kuka-1000 ° C.

I-Cubic Silicon Carbide Whiskersingasetshenziswa njengempahla ethuthukisiwe ku-matrix yepulasitiki, i-metal matrix noma i-ceramic substrate ukuze kuthuthukiswe futhi kuqiniswe.Ukuqondisa okushisayo okuphezulu, ukwahlukanisa okuphezulu kwezinto ze-SIC, ama-substrates amasekethe amakhulu ahlanganisiwe embonini ye-elekthronikhi nezinto ezipakishwe.Njengento ebonakalayo yolwazi, inenani eliphezulu lohlelo lokusebenza emikhakheni yokubonisa i-TV, ukuxhumana kwesimanje, kanye nenethiwekhi.

Amadevu e-Carbonic silicon carbide ayinto enhle kakhulu yokuthuthukisa insimbi, i-ceramic, ne-polymer base composite.