IWindows inikela ngokufana no-60% wamandla alahlekile ezakhiweni. Esimweni esishisayo, amafasitela afudumele evela ngaphandle, amandla okushisa akhona esakhiweni. Lapho kubanda ngaphandle, amafasitela afudumele avela ngaphakathi, futhi akhanya ukushisa endaweni yangaphandle. Le nqubo ibizwa ngokuthi ukupholisa kwe-radiative. Lokhu kusho ukuthi amawindi awaphumelelanga ekugcineni kwesakhiwo afudumele noma apholile njengoba kudingeka.

Kungenzeka yini ukuthuthukisa ingilazi engavula noma icime lo mphumela wokupholisa we-radiative ngokwawo ngokuya ngamazinga okushisa awo? Impendulo inguyebo.

Umthetho weWiegemann-Franz uthi kungcono ukuthuthuka kukagesi okuqukethwe, okungcono ukuthuthuka okushisayo. Kodwa-ke, impahla ye-dioxide ye-vanadium ayihlukile, engawulaleli lo mthetho.

Abaphenyi bangeze ungqimba oluncanyana lwe-vagadium dioxide, i-compound eshintsha kusuka ku-insulator kumqhubi we-conductor acishe acishe abe ngu-68 ° C, ohlangothini lwengilazi.UVanadium Dioxide (VO2)Ingabe impahla esebenzayo enezinto ezijwayelekile zokuguqula isigaba zesigaba. I-morphology yayo ingaguqulwa phakathi kwesithasiselo nensimbi. Liziphatha njenge-insulator ekushiseni kwegumbi futhi njengomqhubi wensimbi emazingeni okushisa angaphezulu kwama-68 ° C. Lokhu kungenxa yokuthi isakhiwo salo se-athomu singaguqulwa kusuka ekwakhekeni kwe-crystal ye-Crystal egumbini elingaphansi kwesakhiwo sensimbi esisezingeni eliphakeme nge-68 ° C, futhi ukuguqulwa kwenzeka ngaphansi kwe-1 nanosecond, okuyinzuzo yezinhlelo zokusebenza ze-elekthronikhi. Ukucwaninga okuhlobene kuholele abantu abaningi ukuthi bakholelwe ukuthi i-vanadium dioxide ingaba yinto yezinguquko embonini ye-elekthronikhi yesikhathi esizayo.

Abaphenyi e-Swiss University bakhulisa izinga lokushisa lesigaba se-dioxide ngenhla kwe-100 ° C ngokungeza i-germanium, izinto zensimbi ezingavamile, kwifilimu ye-dioxide ye-varedium. Benze impumelelo ngezicelo ze-RF, besebenzisa ubuchwepheshe bokushintsha kwe-dioxium kanye nesigaba sokushintshashintsha ukudala izihlungi zemvamisa ze-Ultra-compact, tureble Frequency okokuqala. Lolu hlobo olusha lokuhlunga lulungele ikakhulukazi ibanga lokuvama okusetshenziswa yizinhlelo zokuxhumana zesikhala.

Ngaphezu kwalokho, izakhiwo ezibonakalayo ze-vagadium dioxide, njengokuthula nokudluliselwa kwe-infrared, kuzoshintsha kakhulu ngesikhathi senqubo yenguquko. Kodwa-ke, ukusetshenziswa okuningi kwe-VO2 kudinga izinga lokushisa libe eduze kokushisa kwegumbi, njenge: amawindi ahlakaniphile, ama-infrared detoping, njll., Futhi i-doping inganciphisa ngempumelelo izinga lokushisa lesigaba sesigaba. I-Doping tungsten element kufilimu ye-VO2 ye-VO2 inganciphisa izinga lokushisa lesigaba sefilimu ukuzungeza amazinga okushisa egumbini, ngakho-ke i-tungsten-doped VO2 inamathemba okusebenza abanzi.

Onjiniyela bakaHongwe Nano bathola ukuthi izinga lokushisa lesigaba se-vagadium dioxide lingashintshwa ngokudonswa kwemali, ukucindezelwa, usayizi wokusanhlamvu, njll. Izinto ezisanhlamvu zingaba tungsten, tantalum, niobium ne-terlimanium. I-Tungsten Doping ibhekwa njengendlela esebenza kahle kakhulu ye-doping futhi isetshenziswa kabanzi ukuguqula izinga lokushisa lesigaba. I-doping 1% Tungsten inganciphisa izinga lokushisa lesigaba se-vanadium dioxide film nge-24 ° C.

Ukucaciswa kwe-nano-vanadium yesigaba esihlanzekile ne-tungsten-doped vanadium dioxide inkampani yethu engakunikeza kusuka esitokweni kungokulandelayo:

1..

2. I-vagadium dioxide idonswe nge-1% tungsten (W1% -VO2), izinga lokushisa lesigaba lingu-43 ℃

I-3. I-Agadium Dioxide idonswe nge-1.5% tungsten (w1.5% -VO2), izinga lokushisa lesigaba lesigaba lingu-32 ℃

I-4. UVanadium Dioxide ukhishwe nge-2% tungsten (W2% -Vo2), izinga lokushisa lesigaba lingu-25 ℃

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Ngibheke phambili esikhathini esizayo esiseduze, la mafasitela ahlakaniphile ane-tungsten-doped vanadium dioxide ingafakwa emhlabeni wonke futhi umsebenzi unyaka wonke.